Forming Free Bipolar ReRAM of Ag/a-IGZO/Pt with Improved Resistive Switching Uniformity Through Controlling Oxygen Partial Pressure

Bipolar resistive switching properties of Ag/a-IGZO/Pt structure resistive random-access memories (ReRAMs) were investigated. The amorphous In-Ga-Zn-O (a-IGZO) films were prepared by a radio frequency magnetron sputtering system at room temperature in mixed gas ambient of argon (Ar) and oxygen (O2). The oxygen partial pressures during sputtering deposition were varied from 0% to 17% to engineer defects in an a-IGZO layer. When the oxygen partial pressure increased to 17%, forming-free bipolar resistive switching properties were observed with nearly 100% device yield. In addition, the forming-free ReRAM device presents an enhanced resistive switching uniformity and an enhanced endurance. The forming-free resistive switching is attributed to the concentration of oxygen-related defects in an a-IGZO thin film via analyses of x-ray photoelectron spectroscopy and current–voltage (I–V) curves, with which it is possible to reduce the forming energy of silver (Ag) conductive filaments.