Forming free resistive switching with battery-like characteristics in Ag/ZnFe2O4/ITO ReRAM device

被引：0
|
作者：
Adiba, Adiba [1 ]
Ahad, Tufail [1 ]
Meitei, Ph Nonglen [2 ]
机构：
[1] Aligarh Muslim Univ, Dept Phys, Aligarh, Uttar Pradesh, India
[2] IIT Guwahati, Ctr Nanotechnol, Gauhati, India
来源：
2024 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI, IMFEDK 2024 | 2024年
关键词：
ZnFe2O4; Forming Free; Resistive Switching; Battery Like; Ferrites;
D O I：
10.1109/IMFEDK64776.2024.10814557
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An unusual resistive switching (RS) behavior has been achieved in ZnFe2O4 (ZFO) using Ag (Silver)/ZFO/ITO (Indium Tin Oxide) Resistive Random Access Memory (ReRAM) device. The device exhibits unusual resistive characteristics, showing butterfly-like curves linked to non-faradaic-type capacitance. Changing the external voltage polarity leads to the creation and disruption of conducting filaments (CF) containing oxygen vacancies, potentially causing the resistive switching behavior observed in the fabricated ReRAM device. The resultant device is well-suited for next generation memory application.
引用
收藏
页数：2
相关论文
共 50 条
  • [1] Multilevel resistive switching with negative differential resistance in Al/ NiO/ZnFe2O4/ITO ReRAM device
    Adiba, Adiba
    Pandey, Vidit
    Ahmad, Tufail
    Nehla, Priyanka
    Munjal, Sandeep
    PHYSICA B-CONDENSED MATTER, 2023, 654
  • [2] Resistive switching and battery-like characteristics in highly transparent Ta2O5/ITO thin-films
    Darshika Khone
    Sandeep Kumar
    Mohammad Balal
    Sudipta Roy Barman
    Sunil Kumar
    Abhimanyu Singh Rana
    Scientific Reports, 13
  • [3] Resistive switching and battery-like characteristics in highly transparent Ta2O5/ITO thin-films
    Khone, Darshika
    Kumar, Sandeep
    Balal, Mohammad
    Barman, Sudipta Roy
    Kumar, Sunil
    Rana, Abhimanyu Singh
    SCIENTIFIC REPORTS, 2023, 13 (01)
  • [4] Forming Free Resistive Switching Characteristics in Al/NiFe2O4/FTO Device
    Munjal, Sandeep
    Khare, Neeraj
    3RD INTERNATIONAL CONFERENCE ON CONDENSED MATTER & APPLIED PHYSICS (ICC-2019), 2020, 2220
  • [5] Bipolar and tri-state unipolar resistive switching behaviors in Ag/ZnFe2O4/Pt memory devices
    Hu, Wei
    Chen, Xinman
    Wu, Guangheng
    Lin, Yanting
    Qin, Ni
    Bao, Dinghua
    APPLIED PHYSICS LETTERS, 2012, 101 (06)
  • [6] Bipolar resistive switching with improved memory window in W/ZnFe2O4/Pt devices
    Rajarathinam, Senthilkumar
    Panwar, Neeraj
    Kumbhare, Pankaj
    Ganguly, Udayan
    Venkataramani, Narayanan
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2022, 142
  • [7] Improved resistive switching characteristics of Ag/Al:HfO x /ITO/PET ReRAM for flexible electronics application
    Paul, A. D.
    Biswas, S.
    Das, P.
    Edwards, H. J.
    Dalal, A.
    Maji, S.
    Dhanak, V. R.
    Mondal, A.
    Mahapatra, R.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 36 (06)
  • [8] Forming Free Resistive Switching Characteristics of Cu/MoS2/FTO Device
    Abbas, Yawar
    Rezeq, Moh'd
    Saadat, Irfan
    Hussain, Sajjad
    JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2019, 14 (10) : 1374 - 1381
  • [9] Impact of oxygen partial pressure on resistive switching characteristics of PLD deposited ZnFe2O4 thin films for RRAM devices
    Rajarathinam, Senthilkumar
    Ganguly, Udayan
    Venkataramani, Narayanan
    CERAMICS INTERNATIONAL, 2022, 48 (06) : 7876 - 7884
  • [10] A forming-free bipolar resistive switching behavior based on ITO/V2O5/ITO structure
    Wan, Zhenni
    Darling, Robert B.
    Majumdar, Arka
    Anantram, M. P.
    APPLIED PHYSICS LETTERS, 2017, 111 (04)
12345