Forming free resistive switching with battery-like characteristics in Ag/ZnFe2O4/ITO ReRAM device

被引：0

作者：

Adiba, Adiba ^{[1
]}

Ahad, Tufail ^{[1
]}

Meitei, Ph Nonglen ^{[2
]}

机构：

[1] Aligarh Muslim Univ, Dept Phys, Aligarh, Uttar Pradesh, India

[2] IIT Guwahati, Ctr Nanotechnol, Gauhati, India

来源：

2024 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI, IMFEDK 2024 | 2024年

关键词：

ZnFe2O4; Forming Free; Resistive Switching; Battery Like; Ferrites;

D O I：

10.1109/IMFEDK64776.2024.10814557

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An unusual resistive switching (RS) behavior has been achieved in ZnFe2O4 (ZFO) using Ag (Silver)/ZFO/ITO (Indium Tin Oxide) Resistive Random Access Memory (ReRAM) device. The device exhibits unusual resistive characteristics, showing butterfly-like curves linked to non-faradaic-type capacitance. Changing the external voltage polarity leads to the creation and disruption of conducting filaments (CF) containing oxygen vacancies, potentially causing the resistive switching behavior observed in the fabricated ReRAM device. The resultant device is well-suited for next generation memory application.

引用

页数：2

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