AlGaN/GaN HEMTs grown by ammonia MBE

被引：0
|
作者：
V. V. Volkov
V. P. Ivanova
Yu. S. Kuz’michev
S. A. Lermontov
Yu. V. Solov’ev
D. A. Baranov
A. P. Kaidash
D. M. Krasovitskii
M. V. Pavlenko
S. I. Petrov
Yu. V. Pogorel’skii
I. A. Sokolov
M. A. Sokolov
M. V. Stepanov
V. P. Chalyi
机构：
[1] “Svetlana-Elektronpribor” Corporation,
[2] “Scientific and Technological Equipment” Corporation,undefined
来源：
Technical Physics Letters | 2004年 / 30卷
关键词：
Ammonia; Good Prospect; Electron Mobility; High Electron; Experimental Technology;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The experimental technology and characteristics of domestic AlGaN/GaN high electron mobility transistors are described. The results show good prospects for further development.
引用
收藏
页码：380 / 382
页数：2
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