FinFETs based on layered 2D semiconductors

被引：0
|
作者：
Theresia Knobloch
Tibor Grasser
机构：
[1] TUWien,Institute for Microelectronics
来源：
Science China Materials | 2023年 / 66卷
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摘要：
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页码：3759 / 3760
页数：1
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