Linearity Distortion Analysis of Junctionless Quadruple Gate MOSFETs for Analog Applications

被引：0

作者：

Santosh Kumar Gupta

Akash Singh Rawat

Yogesh Kumar Verma

Varun Mishra

机构：

[1] Motilal Nehru National Institute of Technology,Department of Electronics and Communication Engineering

来源：

Silicon | 2019年 / 11卷

关键词：

Junctionless; Quadruple gate MOSFETs; Linearity distortion; Analog;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

This paper examines a Junctionless quadruple gate (JLQG) MOSFET for analog and linearity distortion performance by numerically calculating transconductance and its higher order derivatives (gm1, gm2and gm3), VIP2, VIP3, IIP3 and IMD3. Influence of various physical device parameters: channel length, height (or width), gate oxide thickness, and channel doping concentration on the linearity distortion parameters are analyzed. From the numerical calculations it has been shown that the desirable characteristics for analog application at a given technology node are obtained for higher values of tSi, tox, and Nd. The present analysis also reveals the guidelines for the design of JLQG MOSFETs with least linearity distortion.

引用

页码：257 / 265

页数：8

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