Band structures of atomic chains of group IV, III–V, and II–VI elements

被引:0
|
作者
V. A. Zaluev
P. N. D’yachkov
机构
[1] Russian Academy of Sciences,Kurnakov Institute of General and Inorganic Chemistry
来源
关键词
Cylindrical Wave; Ionic Chain; Antisymmetric Component; Atomic Wire; Pseudopotential Plane Wave;
D O I
暂无
中图分类号
学科分类号
摘要
The relativistic band structures of AN and ANB8–N chains have been calculated by the linear augmented-cylindrical-wave method, which is an extension of the augmented-plane-wave method for cylindrical polyatomic systems. The band structures of covalent monatomic chains of Group IV elements are characterized by σ(s), π+, and π–, and σ(pz)* bands. The C, Si, Ge, and Sn chains are metallic. There is a considerable difference between the relativistic and nonrelativistic band structures. Because of the cylindrical symmetry of chains in the nonrelativistic model, the π bands crossing the Fermi level are orbitally doubly degenerate (i.e., the π+ and π– band energies are exactly the same). The spin and orbital motion of electrons are coupled in the chains to split π bands, but each π+ and π- band is doubly spin-degenerate. The spin–orbit splitting energy for C and Sn chains varies from 1.7 meV to 0.67 eV. The mass–velocity correction reduces all valence band levels: the level shifts are 2–5 meV for C and up to 2.2 eV for Sn. The Darwin corrections are several-fold lower than the mass–velocity contributions. A sharp change in the band structure is observed in going from covalent to partially ionic chains. The carbon chain has a metallic band structure with a zero gap in the center of the Brillouin zone, and a boron nitride chain is an insulator with an optical gap of 8 eV and optical transitions between the occupied π and vacant π* states at the edge of the Brillouin zone (this is explained by the existence of the antisymmetric component of the electron potential in the BN wire, which mixes even bonding and odd antibonding π states). Going from the BN chain to the AlP, GaAs, and InSb chains is accompanied by a decrease in the chemical bond ionicity, which leads to a gradual decrease in the π–π* gaps.
引用
收藏
页码:1501 / 1508
页数:7
相关论文
共 50 条
  • [41] Growth of II-VI/III-V heterovalent quantum structures
    Lassise, Maxwell B.
    Wang, Peng
    Tracy, Brian D.
    Chen, Guopeng
    Smith, David J.
    Zhang, Yong-Hang
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2018, 36 (02):
  • [42] II-VI/III-V HETEROINTERFACES - EPILAYER ON EPILAYER STRUCTURES
    GUNSHOR, RL
    KOLODZIEJSKI, LA
    OTSUKA, N
    NURMIKKO, AV
    MELLOCH, MR
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : C380 - C380
  • [43] CALCULATED SPIN-ORBIT SPLITTINGS OF SOME GROUP-IV, III-V, AND II-VI SEMICONDUCTORS
    WEPFER, GG
    COLLINS, TC
    EUWEMA, RN
    PHYSICAL REVIEW B, 1971, 4 (04): : 1296 - &
  • [44] ENTHALPY OF MIXING OF METHYL-DERIVATIVES OF ELEMENTS OF II, III, V, VI GROUPS
    TSVETKOV, VG
    KOZYRKIN, BI
    FUKIN, KK
    GALIULLINA, RF
    ZHURNAL OBSHCHEI KHIMII, 1977, 47 (09): : 2155 - 2155
  • [45] Novel chain structures in group VI elements
    Olga Degtyareva
    Eugene Gregoryanz
    Maddury Somayazulu
    Przemyslaw Dera
    Ho-kwang Mao
    Russell J. Hemley
    Nature Materials, 2005, 4 : 152 - 155
  • [46] Novel chain structures in group VI elements
    Degtyareva, O
    Gregoryanz, E
    Somayazulu, M
    Dera, P
    Mao, HK
    Hemley, RJ
    NATURE MATERIALS, 2005, 4 (02) : 152 - 155
  • [48] Band Gap Modulation of the IV, III-V, and II-VI Semiconductors by Controlling the Solid Size and Dimension and the Temperature of Operation
    Chen, Yuming
    Li, Jianwei
    Yang, Xuexian
    Zhou, Zhaofeng
    Sun, Chang Q.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 115 (47): : 23338 - 23343
  • [49] Adjustment of the Band Gap Energy According to Sizes of some Cubic Nanosemiconductors of IV, III-V and II-VI Groups
    Mammar, Hicham
    Benmansour, Abdelhalim
    Kerroumi, Fatima
    JOURNAL OF SURFACE SCIENCE AND TECHNOLOGY, 2018, 34 (1-2) : 58 - 65
  • [50] Modulation of the band structures and optical properties of holey C2N nanosheets by alloying with group IV and V elements
    Du, Juan
    Xia, Congxin
    Wang, Tianxing
    Xiong, Wenqi
    Li, Jingbo
    JOURNAL OF MATERIALS CHEMISTRY C, 2016, 4 (39) : 9294 - 9302