Energy transfer from a semiconductor quantum dot to an organic matrix

被引:0
|
作者
D.M. Basko
V.M. Agranovich
F. Bassani
G.C. La Rocca
机构
[1] INFM and Scuola Normale Superiore,
[2] Piazza dei Cavalieri,undefined
[3] 56126 Pisa,undefined
[4] Italy,undefined
[5] Institute of Spectroscopy,undefined
[6] Russian Academy of Sciences,undefined
[7] 142092,undefined
[8] Troitsk,undefined
[9] Moscow Region,undefined
[10] Russia,undefined
[11] Dipartimento di Fisica,undefined
[12] Università di Salerno,undefined
[13] via S. Allende,undefined
[14] 84081 Baronissi (Sa),undefined
[15] Italy,undefined
关键词
PACS. 78.66.-w Optical properties of specific thin films, surfaces, and low-dimensional structures - 78.20.Bh Theory, models, and numerical simulation - 78.66.Qn Polymers; organic compounds;
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摘要
Förster energy transfer from an excited semiconductor quantum dot to the surrounding organic material is considered. While earlier only the calculations for the lowest excited state of the dot were performed and only the limiting cases of strong and weak confinement were analyzed, in this work we present the results for the crossover region, obtained from the variational calculation. We also consider the transfer from the higher excited states, which may be relevant if the carrier relaxation in the dot is inhibited due to the discreteness of the states. We employ a microscopic quantum mechanical description of the Wannier-Mott exciton in the quantum dot and a macroscopic description of the organic medium. According to our calculations, for II-VI type semiconductors (like CdSe) and strongly absorbing organics (like PTCDA) the energy transfer may occur on time scales of several tens of picoseconds, which is significantly less than the quantum dot excitation lifetime in the absence of such transfer. Thus, as in the case of quantum wells, the Förster mechanism may be an efficient tool for pumping organic light-emitting substances. In this paper we also consider how the carrier intraband relaxation time in the dot may be affected by the Förster energy transfer.
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页码:653 / 659
页数:6
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