SixGe1-x alloy as efficient phonon barrier in Ge/Si superlattices for thermoelectric applications

被引:0
|
作者
Riccardo Dettori
Claudio Melis
Luciano Colombo
机构
[1] Dipartimento di Fisica,
[2] Università di Cagliari,undefined
[3] Cittadella Universitaria,undefined
来源
关键词
Thermal Conductivity; Thermal Transport; Mean Free Path; Phonon Transport; Period Ratio;
D O I
暂无
中图分类号
学科分类号
摘要
By means of atomistic simulations we study how thermal transport is affected by several chemical and morphological parameters in Ge/Si superlattices. We predict thermal conductivity as a function of the alloy barrier stoichiometry and period ratio. Our final target is to provide some technologically useful guidelines for thermoelectric design. In particular, we estimate the optimal Si concentration in the alloy barrier providing a significant thermal conductivity reduction as needed to maximize the thermoelectric figure of merit. We find that thermal conductivity is strongly affected by the barrier stoichiometry x and we suggest 10% ≤ x ≤ 20% as the optimal quantity. Moreover, we observe a thermal conductivity non-monotonic dependence on the period ratio having a minimum for a 2:1 value.
引用
收藏
相关论文
共 50 条
  • [41] Heteroepitaxial growth and characterization of Ge and SixGe1-x films on patterned silicon structures
    Vanamu, G
    Datye, AK
    Zaidi, SH
    HIGH-MOBILITY GROUP-IV MATERIALS AND DEVICES, 2004, 809 : 121 - 126
  • [42] The Effects of Annealing Temperatures on Composition and Strain in SixGe1-x Obtained by Melting Growth of Electrodeposited Ge on Si (100)
    Abidin, Mastura Shafinaz Zainal
    Morshed, Tahsin
    Chikita, Hironori
    Kinoshita, Yuki
    Muta, Shunpei
    Anisuzzaman, Mohammad
    Park, Jong-Hyeok
    Matsumura, Ryo
    Mahmood, Mohamad Rusop
    Sadoh, Taizoh
    Hashim, Abdul Manaf
    MATERIALS, 2014, 7 (02) : 1409 - 1421
  • [43] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES
    ABSTREITER, G
    BRUGGER, H
    WOLF, T
    JORKE, H
    HERZOG, HJ
    PHYSICAL REVIEW LETTERS, 1985, 54 (22) : 2441 - 2444
  • [44] Multistep characteristics in Si/SixGe1-x/Si heterojunction bipolar transistor with δ-doped base
    Univ of Illinois at Urbana, Urbana, United States
    Electron Lett, 8 (683-684):
  • [45] Optical Characterization of SixGe1-x Films Grown on Nanostructured Si Substrates
    Azhari, Ayu Wazira
    Ali, Adnan
    Sopian, Kamaruzzaman
    Hashim, Uda
    Zaidi, Saleem H.
    2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2014, : 194 - 197
  • [46] XFEM simulation of dislocation in SixGe1-x alloy under thermal loads
    Duhan, Neha
    Mishra, B. K.
    Singh, I. V.
    23 EUROPEAN CONFERENCE ON FRACTURE, ECF23, 2022, 42 : 863 - 870
  • [47] Quantum spin Hall effect in a disordered hexagonal SixGe1-x alloy
    Padilha, J. E.
    Seixas, L.
    Pontes, Renato B.
    da Silva, Antonio J. R.
    Fazzio, A.
    PHYSICAL REVIEW B, 2013, 88 (20)
  • [48] FOLDED ACOUSTIC PHONONS IN SI-SIXGE1-X SUPERLATTICES
    BRUGGER, H
    ABSTREITER, G
    JORKE, H
    HERZOG, HJ
    KASPER, E
    PHYSICAL REVIEW B, 1986, 33 (08): : 5928 - 5930
  • [49] Energy band structures of Si-SixGe1-x superlattices
    1600, American Inst of Physics, Woodbury, NY, USA (76):
  • [50] Formation of Ge self-assembled quantum dots on a SixGe1-x buffer layer
    Kim, H
    Shin, C
    Chang, J
    APPLIED SURFACE SCIENCE, 2005, 252 (05) : 1476 - 1480