Effect of ion-beam treatment during reactive radio-frequency magnetron sputtering on the concentration and mobility of charge carriers in ITO films

被引：0
|
作者：
P. N. Krylov
R. M. Zakirova
I. V. Fedotova
机构：
[1] Udmurt State University,
来源：
Semiconductors | 2014年 / 48卷
关键词：
Charge Carrier; Hall Mobility; Indium Oxide; Condensation Temperature; Interstitial Oxygen;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
It is shown that ion-beam treatment during the deposition of ITO films by reactive radio-frequency magnetron sputtering induces a decrease in the resistivity of the films even at room temperature. Variations in the Hall mobility and concentration of charge carriers are studied in relation to the condensation temperature and ion-beam treatment current. The resistivity decreases mainly because of an increase in the concentration of majority charge carriers. It is inferred that the change in the concentration of charge carriers is associated with {ie1237-1} defects.
引用
收藏
页码：1237 / 1241
页数：4
相关论文
共 50 条
  • [21] Rapid thermal annealing for high-quality ITO thin films deposited by radio-frequency magnetron sputtering
    Prepelita, Petronela
    Stavarache, Ionel
    Craciun, Doina
    Garoi, Florin
    Negrila, Catalin
    Sbarcea, Beatrice Gabriela
    Craciun, Valentin
    BEILSTEIN JOURNAL OF NANOTECHNOLOGY, 2019, 10 : 1511 - 1522
  • [22] Effect of radio-frequency substrate bias on ion properties and sputtering behavior of 2 MHz magnetron sputtering
    朱敏
    叶超
    王响英
    蒋阿敏
    张苏
    Plasma Science and Technology, 2019, (01) : 104 - 111
  • [23] Effect of Plused Negative Bias on Nucleation and Morphological Evolution of ZnO Films Deposited by Reactive Radio-frequency Magnetron Sputtering
    Fu Wei-Jia
    Liu Zhi-Wen
    Gu Jian-Feng
    Liu Ming
    Zhang Qing-Yu
    JOURNAL OF INORGANIC MATERIALS, 2009, 24 (03) : 602 - 606
  • [24] Peculiarities of nucleation of PbOx thin films during ion-beam reactive sputtering
    Sviridov, EV
    Xiao, DQ
    Peng, WB
    Shi, Z
    Zhu, JG
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1996, 153 (02): : K1 - K4
  • [25] Effect of radio-frequency substrate bias on ion properties and sputtering behavior of 2 MHz magnetron sputtering
    Zhu, Min
    Ye, Chao
    Wang, Xiangying
    Jiang, Amin
    Zhang, Su
    PLASMA SCIENCE & TECHNOLOGY, 2019, 21 (01)
  • [26] Effect of thermal annealing on the optical properties and residual stress of graded-index-like films deposited by radio-frequency ion-beam sputtering
    Tang, Chien-Jen
    Jaing, Cheng-Chung
    Lee, Kun-Hsien
    Lee, Cheng-Chung
    APPLIED OPTICS, 2011, 50 (09) : C62 - C68
  • [27] Preparation and characterization of copper nitride films at various nitrogen contents by reactive radio-frequency magnetron sputtering
    Yuan, XM
    Yan, PX
    Liu, JZ
    MATERIALS LETTERS, 2006, 60 (15) : 1809 - 1812
  • [28] Growth and Properties of Cu3N Films Prepared by Reactive Radio-frequency Magnetron Sputtering
    Yuan Xiaomei
    Zhang Qing
    Yang Shiliang
    Wei Yan
    Pan Hongliang
    ISTM/2011: 9TH INTERNATIONAL SYMPOSIUM ON TEST AND MEASUREMENT, 2011, : 614 - 618
  • [29] Structural, optical and electrical properties of AZO/Cu/AZO tri-layer films prepared by radio frequency magnetron sputtering and ion-beam sputtering
    Yang, Tianlin
    Zhang, Zhisheng
    Song, Shumei
    Li, Yanhui
    Lv, MaoShui
    Wu, Zhongchen
    Han, Shenghao
    VACUUM, 2008, 83 (02) : 257 - 260
  • [30] Influence of working pressure on the crystallinity and growth behavior of ZnO films deposited by reactive radio-frequency magnetron sputtering
    Liu Zhi-Wen
    Gu Jian-Feng
    Fu Wei-Jia
    Sun Cheng-Wei
    Li Yong
    Zhang Qing-Yu
    ACTA PHYSICA SINICA, 2006, 55 (10) : 5479 - 5486
12345