Multistable defect characterization in proton irradiated single-photon avalanche diodes

Multistable defect generated by proton irradiation is investigated in single-photon avalanche diodes (SPADs). SPADs under the 11-MeV proton irradiation test, are implemented in a 0.35 μ\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\upmu $$\end{document}m high-voltage complementary metal oxide semiconductor technology as an imager array. According to the experimental results, the defect or cluster of defects are located in the space charge region of the SPAD, which modulate the dark response and causes in random telegraph signal noise pattern. The defect charge generation behavior is characterized in different biasing conditions and temperatures.