The structural and optical properties of GaSb/inGaAs type-II quantum dots grown on inP (100) substrate

被引：4
|
作者：
Shuhui Z. [1 ,2 ]
Lu W. [2 ]
Zhenwu S. [2 ]
Yanxiang C. [2 ]
Haitao T. [2 ,3 ]
Huaiju G. [2 ]
Haiqiang J. [2 ]
Wenxin W. [2 ]
Hong C. [2 ]
Liancheng Z. [1 ]
机构：
[1] School of Materials Science and Engineering, Harbin Institute of Technology, Harbin
[2] National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing
[3] Engineering Research Center of Solid-State Lighting, School of Electrical Engineering and Automation, Tianjin Polytechnic University, Tianjin
来源：
Nanoscale Research Letters | / 7卷 / 1期
基金：
国家高技术研究发展计划(863计划); 中国国家自然科学基金;
关键词：
GaSb; Excitation Power; Direct Interband Transition; Increase Excitation Power; InGaAs Buffer Layer;
D O I：
10.1186/1556-276X-7-87
中图分类号：
学科分类号：
摘要：
We have investigated the structural and optical properties of type-II GaSb/InGaAs quantum dots [QDs] grown on InP (100) substrate by molecular beam epitaxy. Rectangular-shaped GaSb QDs were well developed and no nanodash-like structures which could be easily found in the InAs/InP QD system were formed. Low-temperature photoluminescence spectra show there are two peaks centered at 0.75eV and 0.76ev. The low-energy peak blueshifted with increasing excitation power is identified as the indirect transition from the InGaAs conduction band to the GaSb hole level (type-II), and the high-energy peak is identified as the direct transition (type-I) of GaSb QDs. This material system shows a promising application on quantum-dot infrared detectors and quantum-dot field-effect transistor. © 2012 Shuhui et al.
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页码：1 / 6
页数：5
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