Study of the formation of silicon oxide films from tetraethoxysilane solution using the sol-gel method

被引：0
|
作者：
Kislitsin M.V. [1 ]
Korolev M.A. [1 ]
Krasyukov A.Y. [1 ]
机构：
[1] National Research University of Electronic Technology (MIET), Moscow
来源：
Russian Microelectronics | 2014年 / 43卷 / 7期
关键词：
Etching Rate; Breakdown Voltage; RUSSIAN Microelectronics; Refraction Coefficient; Silicon Oxide Film;
D O I：
10.1134/S1063739714070105
中图分类号：
学科分类号：
摘要：
The main stages of forming silicon oxide films from the tetraethoxysilane solution using the sol-gel method are analyzed. The characteristics of the silicon oxide films grown using the optimized manufacturing route are shown to be close to the characteristics of the thermal silicon oxide in terms of the electrical parameters. The increased etching rate is explained with allowance for the peculiarities of the sol-gel process. © 2014, Pleiades Publishing, Ltd.
引用
收藏
页码：445 / 448
页数：3
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