Electron beam irradiation induced crystallization behavior of amorphous Ge2Sb2Te5 chalcogenide material

被引：5
|
作者：
An B.-S. [1 ]
机构：
[1] School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon
来源：
Applied Microscopy | 2019年 / 49卷 / 01期
关键词：
Crystallization; Electron beam irradiation; Ge-Sb-Te based chalcogenide; Transmission electron microscopy;
D O I：
10.1186/s42649-019-0021-5
中图分类号：
学科分类号：
摘要：
The crystallization of amorphous Ge2Sb2Te5 phase change material induced by electron beam irradiation was investigated by in-situ transmission electron microscopy (TEM). Amorphous matrix transformed into a partially crystalline state after being irradiated with a 200-keV electron beam for a long time. Real-time observation revealed that the crystallization of amorphous Ge2Sb2Te5 film occurs through a nucleation and growth mechanism under electron beam irradiation in TEM. While uncertainty from the 2D projection remains, the nuclei have been observed to grow preferentially along the < 100> direction. © 2019, The Author(s).
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