Characteristics of Au/n-Si surface barrier nuclear radiation detectors with a nanometer native oxide layer

The effect of a surface charge on the characteristics of silicon surface barrier detectors with a nanometer oxide layer is studied. Interaction between the surface charge and a metal or a semiconductor at an oxide layer thickness of less than 1 or more than 2 nm, respectively, is taken into account. The application of silicon detectors with an oxide layer having a thickness of more than 2 nm in detecting nuclear resonance reactions is considered.