Characteristics of Au/n-Si surface barrier nuclear radiation detectors with a nanometer native oxide layer

被引：0
|
作者：
M. M. Salokhina
机构：
[1] Russian Academy of Sciences,Institute for Nuclear Research
来源：
Bulletin of the Russian Academy of Sciences: Physics | 2011年 / 75卷 / 11期
关键词：
Oxide Layer; Barrier Height; Voltage Dependence; Reverse Current; Silicon Detector;
D O I：
10.3103/S1062873811040393
中图分类号：
学科分类号：
摘要：
The effect of a surface charge on the characteristics of silicon surface barrier detectors with a nanometer oxide layer is studied. Interaction between the surface charge and a metal or a semiconductor at an oxide layer thickness of less than 1 or more than 2 nm, respectively, is taken into account. The application of silicon detectors with an oxide layer having a thickness of more than 2 nm in detecting nuclear resonance reactions is considered.
引用
收藏
页码：1552 / 1556
页数：4
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