Vacancies in Hg1−xCdxTe

Measurements have been performed of the carrier concentrations in vacancy-doped Hg1−xCdxTe with x=0.22, 0.29, 0.45, and 0.5. Anneals to establish the carrier concentrations were performed on both the mercury- and tellurium-rich sides of the phase field. When these results were added to earlier data for x=0.2 and 0.4, and assuming that all vacancies are doubly ionized, then vacancy concentrations for all values of x and anneal temperature can be represented by simple equations. On the mercury side of the phase field, the vacancy concentrations varied as 2.50×1023(1−x) exp[−1.00/kT] for low concentrations, and as 3.97×107(1−x)1/3ni2/3 exp[−0.33/kT] for high concentrations, where ni is the intrinsic carrier concentration. On the tellurium rich side, the vacancy concentrations varied as 2.81 × 1022(1−x) exp[−0.65/kT] for low concentrations and as 1.92×107(1−x)1/3ni2/3 exp[−0.22/kT] for high concentrations.