Accuracy of Total Reflection X-Ray Fluorescence Spectrometry near the Detection Limit

被引:0
|
作者
Yoshihiro Mori
Kazuhiko Kubota
Kengo Shimanoe
Tadashi Sakon
机构
[1] c/o NSC Electron Corporation,Advanced Technology Research Laboratories, Nippon Steel Corporation
[2] Nippon Steel Corporation,Advanced Technology Research Laboratories
[3] Kyushu University,Graduate School of Engineering Science
来源
Analytical Sciences | 1998年 / 14卷
关键词
Total reflection X-ray fluorescence spectrometry; atomic absorption spectrophotometry; accuracy; silicon wafer; contamination; transition metal;
D O I
暂无
中图分类号
学科分类号
摘要
Total reflection X-ray fluorescence spectrometry (TXRF) is one of the most common tools to analyze metal contaminants on silicon wafers and other substrate surfaces. Although the detection limit of commercial TXRF was improved to the concentration region of 109 atoms cm–2, its accuracy at low concentration was not yet clarified until now. In this paper, we examine the accuracy of the quantitative analysis by TXRF under 1011 atoms cm–2 for Fe, Ni, Cu and Zn. In particular, four factors (standard sample, reference analyzing method, compensation of spurious peak and peak separation) are considered. Under a controlled condition, the accuracy is within 20% as compared with atomic absorption spectropho-tometry (AAS).
引用
收藏
页码:275 / 280
页数:5
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