Optimized Luminescent Properties of GaSb-Based Heterostructures Produced by Liquid-Phase Epitaxy

被引：0
|
作者：
V. V. Arbenina
机构：
[1] Lomonosov Academy of Fine Chemical Technology,
来源：
Inorganic Materials | 2002年 / 38卷
关键词：
Inorganic Chemistry; Luminescent Property; GaSb; Versus Compound; Epitaxy Growth;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A procedure is proposed for optimizing the luminescent properties of GaSb epilayers by codoping with a few impurities during the liquid-phase epitaxy growth of heterostructures. This approach is also applicable to other III–V compounds.
引用
收藏
页码：331 / 335
页数：4
相关论文
共 50 条
  • [31] GaSb-BASED HETEROSTRUCTURES FOR HIGH POWER AND PULSED LASER OPERATION
    Paajaste, J.
    Suomalainen, S.
    Koskinen, R.
    Harkonen, A.
    Kivisto, S.
    Guina, M.
    Okhotnikov, O. G.
    Pessa, M.
    LITHUANIAN JOURNAL OF PHYSICS, 2010, 50 (01): : 41 - 46
  • [32] Superlinear electroluminescence in GaSb-based heterostructures with high potential barriers
    Kalinina, K. V.
    Mikhailova, M. P.
    Zhurtanov, B. E.
    Stoyanov, N. D.
    Yakovlev, Yu. P.
    SEMICONDUCTORS, 2013, 47 (01) : 73 - 80
  • [33] GaInAsSb/GaSb heterostructures grown in the spinodal decay region by liquid-phase epitaxy from Sb-enriched solution-melts
    Vasil'ev, VI
    Akhmedov, D
    Geryagin, AG
    Kuchinskii, VI
    Nikitina, IP
    Smirnov, VM
    Tret'yakov, DN
    SEMICONDUCTORS, 1999, 33 (09) : 1034 - 1036
  • [34] PROPERTIES OF INSB PHOTODIODES FABRICATED BY LIQUID-PHASE EPITAXY
    KANZAKI, K
    YAHATA, A
    MIYAO, W
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (07) : 1329 - 1334
  • [35] GaInAsSb/GaSb heterostructures grown in the spinodal decay region by liquid-phase epitaxy from Sb-enriched solution-melts
    V. I. Vasil’ev
    D. Akhmedov
    A. G. Geryagin
    V. I. Kuchinskii
    I. P. Nikitina
    V. M. Smirnov
    D. N. Tret’yakov
    Semiconductors, 1999, 33 : 1034 - 1036
  • [36] LIQUID-PHASE EPITAXY OF IN(AS,SB) ON GASB SUBSTRATES USING ANTIMONY-RICH MELTS
    SKELTON, JR
    KNIGHT, JR
    SOLID-STATE ELECTRONICS, 1985, 28 (11) : 1166 - 1168
  • [37] PECULIARITIES OF LIQUID-PHASE EPITAXY IN GAINPAS/INP LATTICE-MATCHED HETEROSTRUCTURES
    GORELENOK, AT
    KUZNETSOV, VV
    MOSKVIN, PP
    SOROKIN, VS
    JOURNAL OF CRYSTAL GROWTH, 1987, 80 (02) : 298 - 306
  • [38] LIQUID-PHASE EPITAXY OF HEAVILY TE DOPED GA1-XALXSB ON GASB
    GAUTIER, P
    JOULLIE, A
    BOUGNOT, G
    CHAMPNESS, CH
    JOURNAL OF CRYSTAL GROWTH, 1981, 51 (02) : 336 - 344
  • [39] REVERSAL IN THE GROWTH OR DISSOLUTION OF III-V-HETEROSTRUCTURES BY LIQUID-PHASE EPITAXY
    SMALL, MB
    GHEZ, R
    JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 926 - 930
  • [40] LIQUID-PHASE EPITAXY OF GARNETS
    ROBERTSON, JM
    JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 233 - 242
12345