Effects of electric potential on chemical-mechanical polishing of copper

被引:0
|
作者
G. Helen Xu
Hong Liang
机构
[1] University of Alaska Fairbanks,Department of Mechanical Engineering
来源
关键词
Electric potential; Cu CMP; planarization;
D O I
暂无
中图分类号
学科分类号
摘要
The effect of electric potential on the dissolution and polishing behavior of copper in acidic and alkaline media was investigated. The electromechanical polishing mechanism of copper is discussed based on removal rate of copper, pH of slurries, and surface morphology of polished copper. The most interesting phenomenon occurred in chemical-mechanical polishing (CMP) of copper with applied direct current (DC) voltage is the variation of pH during polishing. The dissolution experiments indicated that an acidic agent might have more hydrogen reduced with higher DC potential. The results demonstrated that the application of DC voltage is beneficial to improve planarization of copper polishing in an alkaline slurry.
引用
收藏
页码:272 / 277
页数:5
相关论文
共 50 条
  • [21] Stabilization of alumina slurry for chemical-mechanical polishing of copper
    Luo, Q
    Campbell, DR
    Babu, SV
    LANGMUIR, 1996, 12 (15) : 3563 - 3566
  • [22] PATTERN GEOMETRY-EFFECTS IN THE CHEMICAL-MECHANICAL POLISHING OF INLAID COPPER STRUCTURES
    STEIGERWALD, JM
    ZIRPOLI, R
    MURARKA, SP
    PRICE, D
    GUTMANN, RJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (10) : 2842 - 2848
  • [23] ELECTROCHEMICAL POTENTIAL MEASUREMENTS DURING THE CHEMICAL-MECHANICAL POLISHING OF COPPER THIN-FILMS
    STEIGERWALD, JM
    DUQUETTE, DJ
    MURARKA, SP
    GUTMANN, RJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (07) : 2379 - 2385
  • [24] CHEMICAL-MECHANICAL POLISHING OF SILICON
    BLAKE, LH
    MENDEL, E
    SOLID STATE TECHNOLOGY, 1970, 13 (01) : 42 - &
  • [25] Chemical-mechanical polishing of copper with oxide and polymer interlevel dielectrics
    Gutmann, RJ
    Steigerwald, JM
    You, L
    Price, DT
    Neirynck, J
    Duquette, DJ
    Murarka, SP
    THIN SOLID FILMS, 1995, 270 (1-2) : 596 - 600
  • [26] Interfacial transfer between copper and polyurethane in chemical-mechanical polishing
    Hong Liang
    Thierry Le Mogne
    Jean-Michel Martin
    Journal of Electronic Materials, 2002, 31 : 872 - 878
  • [27] Chemical-mechanical Polishing of Copper Using Molybdenum Dioxide Slurry
    Sharath Hegde
    Udaya B. Patri
    S. V. Babu
    Journal of Materials Research, 2005, 20 (9) : 2553 - 2561
  • [28] Stabilization of gamma alumina slurry for chemical-mechanical polishing of copper
    Song, Myung-Geun
    Lee, Jin-ho
    Lee, Yoon-Gyu
    Koo, Ja-ho
    JOURNAL OF COLLOID AND INTERFACE SCIENCE, 2006, 300 (02) : 603 - 611
  • [29] Interfacial transfer between copper and polyurethane in chemical-mechanical polishing
    Liang, H
    Le Mogne, T
    Martin, JM
    JOURNAL OF ELECTRONIC MATERIALS, 2002, 31 (08) : 872 - 878
  • [30] Chemical-mechanical polishing of copper using molybdenum dioxide slurry
    Hegde, S
    Patri, UB
    Babu, SV
    JOURNAL OF MATERIALS RESEARCH, 2005, 20 (09) : 2553 - 2561