Structural, optical and photoelectric properties of ZnO:In and MgxZn1−xO nanofilms prepared by sol-gel method

被引：0

作者：

Y. C. Liu

Y. W. Chen

C. L. Shao

S. X. Lu

机构：

[1] Northeast Normal University,Center for Advanced Optoelectronic Functional Material Research

[2] Beijing Institute of Technology,Department of Chemistry, School of Science

来源：

Journal of Sol-Gel Science and Technology | 2006年 / 39卷

关键词：

ZnO; ZnO:In; Mg; Zn; O; Photoelectric conversion; Photocurrent response;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

ZnO, ZnO:In and MgxZn1−xO alloy films with hexagonal wurtzite structures were fabricated using sol-gel method. X-ray diffraction (XRD), UV-Vis absorption spectra and photoluminescence spectra were used to characterize the structural and optical properties of the films. XRD spectra illustrated that no single In2O3 or MgO phase was observed for the compound materials. The photoluminescence spectra of ZnO showed a strong UV emission band and a very weak visible emission associated with deep level defects. In incorporation induced the shift of optical band gap, quenching of the near-band-edge emission. The photoelectric conversion properties of ZnO:In nanofilms/SiO2/Si heterostructures were investigated, which showed a high intensity photocurrent response in the UV and visible region. The MgxZn1−xO films with different x values from 0 to 0.15 were obtained. The intense near-band-edge emissions and weak deep level emissions were observed. The photocurrent properties of Mg0.15Zn0.85O nanofilms/SiO2 were studied.

引用

页码：57 / 62

页数：5

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