Modeling the High-Voltage Gas-Discharge-Plasma Etching of SiO2

被引：4
|
作者：
Kolpakov V.A. [1 ]
机构：
[1] Korolev State Aerospace University, Samara
来源：
Russian Microelectronics | 2002年 / 31卷 / 6期
关键词：
SiO2; General Relation; Trench; Etch Rate;
D O I：
10.1023/A:1020981825473
中图分类号：
学科分类号：
摘要：
The dry etching of trenches in SiO2 by high-voltage gas discharge is studied theoretically and experimentally. General relations between etch rate and process parameters are established. The formalism is confirmed by experiment with a CF4 plasma.
引用
收藏
页码：366 / 374
页数：8
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