Resonance capture of holes in modulation-doped n-AlGaAs/GaAs quantum well structures

被引：0
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作者：
N. G. Yaremenko
M. V. Karachevtseva
V. A. Strakhov
机构：
[1] Russian Academy of Sciences,Kotel’nikov Institute of Radio Engineering and Electronics
来源：
Doklady Physics | 2011年 / 56卷
关键词：
GaAs; GaAs Layer; Space Thickness; Excess Carrier; Resonance Capture;
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学科分类号：
摘要：
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页码：150 / 154
页数：4
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