Radiation defects in n-6H-SiC irradiated with 8 MeV protons

被引：0
|
作者：
A. A. Lebedev
A. I. Veinger
D. V. Davydov
V. V. Kozlovskii
N. S. Savkina
A. M. Strel’chuk
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
[2] St. Petersburg State Technical University,undefined
来源：
Semiconductors | 2000年 / 34卷
关键词：
Radiation; United States; Electron Spin Resonance; Charged Particle; Magnetic Material;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Capacitance methods and electron spin resonance (ESR) were applied to study deep centers in n-6H-SiC irradiated with 8 MeV protons. Schottky diodes and p-n structures grown by sublimation epitaxy or commercially produced by CREE Inc. (United States) were used. The type of the irradiation-induced centers is independent of the material fabrication technology and the kind of charged particles used. Irradiation results in an increase in the total concentration of donor centers. The possible structure of the centers is suggested on the basis of data on defect annealing and ESR.
引用
收藏
页码：861 / 866
页数：5
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