Investigation of Pd|HfO2|AlGaN|GaN Enhancement-Mode High Electron Mobility Transistor with Sensitization, Activation, and Electroless-Plating Approaches

被引：0
|
作者：
Y.-C. Lin
J.-S. Niu
W.-C. Liu
J.-H. Tsai
机构：
[1] Institute of Microelectronics,
[2] Department of Electrical Engineering,undefined
[3] National Cheng-Kung University,undefined
[4] Department of Electronic Engineering,undefined
[5] National Kaohsiung Normal University,undefined
来源：
Semiconductors | 2020年 / 54卷
关键词：
HfO; , AlGaN; GaN; metal-oxide-semiconductor; high electron mobility transistor; electroless plating; gate recess ; threshold voltage;
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页码：803 / 810
页数：7
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