Atomic layer deposition of Zn1−xMgxO:Al transparent conducting films

Aluminum-doped zinc magnesium oxide (Zn1−xMgxO:Al) films with the Mg content from x = 0 to 0.48 were obtained using atomic layer deposition (ALD). Together with the thorough studies of the properties of the deposited films, the ALD growth parameters conditioning possible applications of Zn1−xMgxO:Al films as transparent electrodes are investigated. Very low film resistivities (≤~10−3 Ω cm) and the metallic-type conductivity behavior at room temperature for Zn1−xMgxO:Al films are observed for Mg content x < 0.19. The Mg content of x = 0.19 results in the optical absorption edge of Zn1−xMgxO:Al films at 3.81 eV (325 nm). Other film parameters like work function or sheet resistance can be easily modified by variation of growth parameters.