2.3-μm High-Power Type I Quantum-Well GaInAsSb/AlGaAsSb/GaSb Laser Diode Arrays with Increased Fill Factor

被引：0
|
作者：
D. Donetsky
J. Chen
L. Shterengas
G. Kipshidze
D. Westerfeld
机构：
[1] Stony Brook University,Department of Electrical and Computer Engineering
[2] Power Photonic Corporation,undefined
来源：
Journal of Electronic Materials | 2008年 / 37卷
关键词：
GaSb; mid-infrared; laser diode; laser diode array;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Arrays of 100-μm-wide GaInAsSb/AlGaAsSb laser diode emitters with a fill factor of 30% have been fabricated. Suppression of lateral lasing was achieved by the incorporation of grooves between the emitters. A quasi-continuous wave (CW) (30 μs, 300 Hz) output power of 16.7 W from a 4-mm-long laser bar has been demonstrated.
引用
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页码：1770 / 1773
页数：3
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