Effect of annealing on neutron-transmutation-doped GaN epilayers grown on sapphire substrates

被引：0
|
作者：
S. H. Park
T. W. Kang
T. W. Kim
机构：
[1] Dongguk University,Department of Physics
[2] Hanyang University,Advanced Semiconductor Research Center, Division of Electrical and Computer Engineering
来源：
Journal of Materials Science | 2004年 / 39卷
关键词：
Polymer; Sapphire; Sapphire Substrate;
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：3217 / 3219
页数：2
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