SiC nanowires with thickness-controlled SiO2 shells: Fabrication, mechanism, reaction kinetics and photoluminescence properties

SiC nanowires with thickness-controlled SiO2 shells have been obtained by a simple and efficient method, namely treatment of SiC/SiO2 core-shell nanowires in NaOH solution. The products were characterized by transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), Raman spectroscopy, infrared (IR) spectroscopy, and photoluminescence spectroscopy. The thickness of the SiO2 shell can be effectively controlled by selecting the appropriate processing time, and pure SiC nanowires were also obtained by alkaline cleaning in 1 mol·L−1 NaOH solution for 40 min at 70 °C. A mechanism for the removal of the SiO2 shells has been proposed, and a two-phase reaction kinetic equation was derived to explain the rate of the removal of the SiO2 shells. The validity of this equation was verified by experiment. This work not only describes an effective experimental method for achieving SiC nanowires with thickness-controlled SiO2 coatings but also provides a fundamental theoretical equation with a certain level of generality. In addition, photoluminescence (PL) measurement results showed that the SiC nanowires sheathed with an optimum SiO2 thickness (3.03 nm) have better photoluminescence properties than either the bare SiC nanowires or SiC nanowires with thicker coatings of SiO2.