Odd- and even-denominator fractional quantum Hall states in monolayer WSe2

被引:0
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作者
Qianhui Shi
En-Min Shih
Martin V. Gustafsson
Daniel A. Rhodes
Bumho Kim
Kenji Watanabe
Takashi Taniguchi
Zlatko Papić
James Hone
Cory R. Dean
机构
[1] Columbia University,Department of Physics
[2] Raytheon BBN Technologies,Department of Mechanical Engineering
[3] Columbia University,School of Physics and Astronomy
[4] National Institute for Materials Science,undefined
[5] University of Leeds,undefined
来源
Nature Nanotechnology | 2020年 / 15卷
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摘要
Monolayer semiconducting transition-metal dichalcogenides (TMDs) represent a unique class of two-dimensional (2D) electron systems. Their atomically thin structure facilitates gate tunability just like graphene does, but unlike graphene, TMDs have the advantage of a sizable band gap and strong spin–orbit coupling. Measurements under large magnetic fields have revealed an unusual Landau level (LL) structure1–3, distinct from other 2D electron systems. However, owing to the limited sample quality and poor electrical contact, probing the lowest LLs has been challenging, and observation of electron correlations within the fractionally filled LL regime has not been possible. Here, through bulk electronic compressibility measurements, we investigate the LL structure of monolayer WSe2 in the extreme quantum limit, and observe fractional quantum Hall states in the lowest three LLs. The odd-denominator fractional quantum Hall sequences demonstrate a systematic evolution with the LL orbital index, consistent with generic theoretical expectations. In addition, we observe an even-denominator state in the second LL that is expected to host non-Abelian statistics. Our results suggest that the 2D semiconductors can provide an experimental platform that closely resembles idealized theoretical models in the quantum Hall regime.
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页码:569 / 573
页数:4
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