A numerical analysis of gain characteristics of Er-doped Al2O3 waveguide amplifiers

被引:0
|
作者
S.F. Li
C.L. Song
Q.J. Xiong
B. Ran
机构
[1] Dalian University of Technology,Physics department
来源
关键词
Er-doped waveguide amplifier; optical gain; optimization; pumping;
D O I
暂无
中图分类号
学科分类号
摘要
The gain characteristics of erbium-doped Al2O3 waveguide amplifiers are investigated by solving numerically rate equations with upconversion effects and propagation equations. We obtained the dependence of gain of erbium-doped Al2O3 waveguide amplifiers on the waveguide length, erbium concentration and pump power at different pumping wavelengths (980 and 1480 nm). The performance of amplifiers pumping at 1480 and 980 nm are compared. It is shown that 980 nm pumping has higher gain and higher pumping efficiency. The parameters of waveguide amplifiers have been optimized. A optical gain of 43 dB can be achieved for a optimum waveguide length of 8.25 cm and 5.8 × 1020 cm−3 Er concentration pumped with 100 mW at 980 nm, that is a gain of 5.2 dB/cm.
引用
收藏
页码:859 / 866
页数:7
相关论文
共 50 条
  • [21] Enchancement of the photoluminescence in Er-doped Al2O3 fabricated by atomic layer deposition
    Ronn, John
    Karvonen, Lasse
    Pyymaki-Perros, Alexander
    Peyghambarian, Nasser
    Lipsanen, Harri
    Saynatjoki, Antti
    Sun, Zhipei
    INTEGRATED OPTICS: DEVICES, MATERIALS, AND TECHNOLOGIES XX, 2016, 9750
  • [22] Er2O3 for high-gain waveguide amplifiers
    Sajan Saini
    Kevin Chen
    Xiaoman Duan
    Jurgen Michel
    Lionel C. Kimerling
    Michal Lipson
    Journal of Electronic Materials, 2004, 33 : 809 - 814
  • [23] Er2O3 for high-gain waveguide amplifiers
    Saini, S
    Chen, K
    Duan, XM
    Michel, J
    Kimerling, LC
    Lipson, M
    JOURNAL OF ELECTRONIC MATERIALS, 2004, 33 (07) : 809 - 814
  • [24] Gain characteristics of 6cm-long Er-doped bismuthate waveguide
    Kondo, Y
    Ono, M
    Kageyama, J
    Hayashi, H
    Reyes, M
    Sugimoto, N
    ELECTRONICS LETTERS, 2005, 41 (06) : 317 - 318
  • [25] 2.0 dB/cm gain in an Al2O3:Er3+ waveguide on silicon
    Bradley, J. D. B.
    Agazzi, L.
    Geskus, D.
    Ay, F.
    Worhoff, K.
    Pollnau, M.
    2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5, 2009, : 892 - 893
  • [26] Gain characteristics of Er3+/Yb3+ co-doped waveguide amplifiers
    Wang, Yuhai
    Ma, Chunsheng
    Li, Delu
    Zhang, Daming
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2008, 29 (03): : 578 - 582
  • [27] Characteristic comparisons of Yb-Er co-doped Al2O3 waveguide amplifiers with different geometric structures
    Li, Shufeng
    Li, Chengren
    Liu, Zhongfan
    Zhu, Wenxuan
    Song, Changlie
    OPTOELECTRONIC DEVICES AND INTEGRATION II, 2008, 6838
  • [28] Analysis of output statistics of single and double pass Er-doped LiNbO3 waveguide amplifiers
    Puscas, NN
    Scarano, D
    Girardi, R
    Montrosset, I
    OPTICAL AND QUANTUM ELECTRONICS, 1997, 29 (08) : 799 - 809
  • [29] Analysis of output statistics of single and double pass Er-doped LiNbO3 waveguide amplifiers
    N. N. Puscas
    D. Scarano
    R. Girardi
    I. Montrosset
    Optical and Quantum Electronics, 1997, 29 : 799 - 809
  • [30] Enabling III-V Integrated Photonics with Er-Doped Al2O3 Films
    Jarschel, P. F.
    Souza, M. C. M. M.
    Von Zuben, A. A. G.
    Ramos, A. C.
    Merlo, R. B.
    Frateschi, N. C.
    2014 29TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO), 2014,