First Principles Investigation of Electronic, Optical, and Magnetic Properties of MgYb2X4 (X = S, Se, Te)

被引:0
|
作者
Syed Saad Ali Shah
G. Murtaza
Shamim Khan
Saleh Muhammad
Abdullah Yar
Muhammad Waqar Ashraf
机构
[1] Hazara University Mansehra,Department of Physics
[2] Islamia College University,Materials Modelling Lab, Department of Physics
[3] Prince Mohammad Bin Fahd University,Department of Mathematics & Natural Sciences
[4] Kohat University of Science and Technology,Department of Physics
关键词
Spintronics; Half-metallic materials; Magnetic moments; Reflectivity;
D O I
暂无
中图分类号
学科分类号
摘要
Due to ferromagnetic properties and energy storing ability, MgYb2X4 (X = S, Se, Te) spinel compounds are found to be interesting due to their promising usages in spintronic appliances. In the current study, the electronic and magnetic properties of MgYb2X4 (X = S, Se, Te) have been investigated via density functional theory calculations. The optimization procedure is carried out first in order to explore the total ground state energy of the unit cell of the specified compounds by GGA. Furthermore, the lattice parameters obtained for these spinels are in good agreement with experimental values. Modified Becke–Johnson (mBJ) technique has been applied to observe the electronic and magnetic characteristics. The electronic band structure and density of states suggest a half-metallic ferromagnetic structure of the compounds. These compounds have been found to possess a half-metallic gap (gh), showing their tendency for application in spintronic devices. The magnetic moments have also been obtained by calculating magnetic properties, which also confirms their ferromagnetic nature. Some optical characteristics have also been calculated.
引用
收藏
页码:263 / 273
页数:10
相关论文
共 50 条
  • [31] First principles study on magnetic properties of Zn vacancies in ZnO doped with single chalcogen X (X = S, Se, and Te)
    Sargolzaei, Mahdi
    Lotfizadeh, Neda
    Hayn, Roland
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (07)
  • [32] First-principles study of the structural, elastic and electronic properties of SbXI (X=S, Se, Te) crystals
    Tahsin Ozer
    Suleyman Cabuk
    Journal of Molecular Modeling, 2018, 24
  • [33] STRUCTURAL, ELASTIC AND ELECTRONIC PROPERTIES OF NEODYMIUM CHALCOGENIDES (NdX, X=S, Se, Te): FIRST PRINCIPLES STUDY
    Singh, Rishi Pal
    Singh, Rajendra Kumar
    Rajagopalan, Mathrubutham
    CHALCOGENIDE LETTERS, 2011, 8 (05): : 325 - 340
  • [34] First-principles study of the structural, elastic and electronic properties of SbXI (X=S, Se, Te) crystals
    Ozer, Tahsin
    Cabuk, Suleyman
    JOURNAL OF MOLECULAR MODELING, 2018, 24 (03)
  • [35] Structural, electronic, magnetic, and optical properties of new TiXY (X = F and Cl; Y = S, Se and Te) Janus monolayers: A first-principles study
    Hoat, D. M.
    Nguyen, Duy Khanh
    On, Vo Van
    Rivas-Silva, J. F.
    Cocoletzi, Gregorio H.
    OPTIK, 2021, 244
  • [36] Thermoelectric properties of ferroelectric α-In 2 X 3 (X = S, Se, Te) monolayers: A first-principles study
    Yang, Xue
    Chen, Anmin
    MATERIALS TODAY COMMUNICATIONS, 2024, 41
  • [37] First Principle Investigations on Electronic, Magnetic, Thermodynamic, and Transport Properties of TlGdX2 (X = S, Se, Te)
    Gautam, R.
    Kumar, A.
    Singh, R. P.
    ACTA PHYSICA POLONICA A, 2017, 132 (04) : 1371 - 1378
  • [38] Structural, electronic, and transport properties of Janus GaInX 2 (X = S, Se, Te) monolayers: first-principles study
    Vu, Tuan V.
    Linh, Tran P. T.
    Phuc, Huynh, V
    Duque, C. A.
    Kartamyshev, A., I
    Hieu, Nguyen N.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2022, 34 (04)
  • [39] The structural, elastic, electronic, magnetic and optical properties of the Zn0.75V0.25X (X = S, Se or Te)
    Feng, Zhong-Ying
    Yang, Yan
    Zhang, Jian-Min
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 29 (12) : 10190 - 10203
  • [40] The structural, elastic, electronic, magnetic and optical properties of the Zn0.75V0.25X (X = S, Se or Te)
    Zhong-Ying Feng
    Yan Yang
    Jian-Min Zhang
    Journal of Materials Science: Materials in Electronics, 2018, 29 : 10190 - 10203