Sequential structural characterization of layers in the GaN/AlN/SiC/Si(111) system by X-ray diffraction upon every growth stage

被引：0

作者：

V. V. Ratnikov

A. E. Kalmykov

A. V. Myasoedov

S. A. Kukushkin

A. V. Osipov

L. M. Sorokin

机构：

[1] Russian Academy of Sciences,Ioffe Physical Technical Institute

[2] Russian Academy of Sciences,Institute for Problems of Mechanical Engineering

来源：

Technical Physics Letters | 2013年 / 39卷

关键词：

Technical Physic Letter; Transmission Electron Microscopy Data; Hydride Chloride Vapor Phase Epitaxy; Solid Phase Epitaxy; Biaxial Tensile Stress;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

X-ray diffraction and transmission electron microscopy techniques have been used to study the dynamics of variation of the structural characteristics and deformation state in SiC, AlN, and GaN epilayers sequentially grown on a Si(111) substrate. In this system, the SiC layer has been grown by solid-phase epitaxy, while the AlN and GaN layers have been deposited by chloride-hydride vapor-phase epitaxy (HVPE) using argon as a carrier gas.

引用

页码：994 / 997

页数：3

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