“Surface-enhanced Raman spectroscopy studies of the passive layer formation in gold leaching from thiosulfate solutions in the presence of cupric ion”

被引:1
|
作者
E. A. Nicol
J. Y. Baron
J. Mirza
J. J. Leitch
Y. Choi
J. Lipkowski
机构
[1] University of Guelph,Department of Chemistry
[2] Barrick Gold Corporation,undefined
关键词
SERS; Thiosulfate; Open Circuit Potential; Passive Layer; Gold Nanorod;
D O I
暂无
中图分类号
学科分类号
摘要
Complementary electrochemical and spectroscopic techniques were used to characterize the behavior and composition of the passive layer formed at the gold surface in a thiosulfate electrolyte in the presence of cupric ions. Raman studies of three different cationic (calcium, ammonium, and sodium) thiosulfate leaching solutions revealed that the concentrations of thiosulfate, trithionate, sulfate, and tetrathionate remained constant in the bulk solution over a 3-h time period. The initial leaching current densities of these three systems were identical; however, significant differences in the open circuit potentials of these systems were observed. To provide additional information about the nature of the passive layer, gold nanorod array electrodes were fabricated and employed as substrates for studying the species present at the gold–thiosulfate interface using surface-enhanced Raman spectroscopy (SERS). The composition and behavior of the passive layer at the gold–thiosulfate interface greatly differed from those of the bulk solutions. The passive layer consisted primarily of elemental sulfur and sulfide-like species, with thiosulfate and its oxidation products, such as tri- and tetrathionates, as minority components. The nature of the cation (calcium, sodium, or ammonium) of the thiosulfate salt showed no significant effect on the composition of the passive layer at leaching times longer than 100 min. In addition, the presence of cupric ions also had no significant effect on the formation of the passive layer. However, copper is a much better oxidant than oxygen in gold–thiosulfate leaching reactions.
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页码:1469 / 1484
页数:15
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