Structural and optical characterization of indium-antimony complexes in ZnO

One of the main obstacles to the technical application of the wide-gap semiconductor ZnO represents the difficulty to achieve reliable p-type doping of ZnO with group V elements (N, P, As, Sb) acting as acceptors located on O lattice sites. The theoretically proposed concepts of cluster-doping or codoping may lead to an enhanced and stable p-type conductivity of ZnO. We report on PAC results obtained by codoping experiments of ZnO by ion implantation using the donor 111In and the group-V acceptor Sb. The formation of In-Sb pairs has been observed. Based on these PAC results, there is no evidence for the formation of In-acceptor complexes involving more than one Sb acceptor. These results has been complemented by photoluminescence measurements.