A High Voltage CMOS Voltage Level Converter for a Low Voltage Process

被引：0
|
作者：
Shubin V.V. [1 ]
机构：
[1] Department of Semiconductor Devices and Microelectronics, Novosibirsk State Technical University, Novosibirsk
来源：
Russian Microelectronics | 2022年 / 51卷 / 03期
关键词：
CMOS voltage level converters; converting equipment; power consumption; quality; reliability; speed;
D O I：
10.1134/S1063739722020081
中图分类号：
学科分类号：
摘要：
Abstract: A new high-voltage CMOS voltage level converter designed for manufacturing in low-voltage technological processes is presented. The features of the construction, operation and application of a high-voltage CMOS converter using low-voltage transistors are described. The new high-voltage CMOS voltage level converter is compared with its analog in terms of dynamic characteristics. The described high-voltage voltage level converter, in comparison with the alternative circuit, has a higher response speed (~14% in the worst case), and also allows us to form a higher quality output waveform with the minimal distortion. © 2022, Pleiades Publishing, Ltd.
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页码：155 / 163
页数：8
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