Composition and optical properties of amorphous a-SiOx:H films with silicon nanoclusters

被引:0
|
作者
V. A. Terekhov
E. I. Terukov
Yu. K. Undalov
E. V. Parinova
D. E. Spirin
P. V. Seredin
D. A. Minakov
E. P. Domashevskaya
机构
[1] Voronezh State University,Ioffe Physical–Technical Institute
[2] Russian Academy of Sciences,undefined
来源
Semiconductors | 2016年 / 50卷
关键词
Amorphous Film; Interference Structure; Silicon Nanoclusters; Silicon Suboxide; Local Partial Density;
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中图分类号
学科分类号
摘要
The phase composition and optical properties of hydrogenated amorphous films of silicon suboxide (a-SiOx:H) with silicon nanoclusters are studied. Ultrasoft X-ray emission spectroscopy show that silicon- suboxide films with various oxidation states and various amorphous silicon-cluster contents can be grown using dc discharge modulation. In films with an ncl-Si content of ∼50%, the optical-absorption edge is observed, whose extrapolation yields an optical band gap estimate of ∼3.2–3.3 eV. In the visible region, rather intense photoluminescence bands are observed, whose peak positions indicate the formation of silicon nanoclusters 2.5–4.7 nm in size in these films, depending on the film composition.
引用
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页码:212 / 216
页数:4
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