Composition and optical properties of amorphous a-SiOx:H films with silicon nanoclusters

被引:0
|
作者
V. A. Terekhov
E. I. Terukov
Yu. K. Undalov
E. V. Parinova
D. E. Spirin
P. V. Seredin
D. A. Minakov
E. P. Domashevskaya
机构
[1] Voronezh State University,Ioffe Physical–Technical Institute
[2] Russian Academy of Sciences,undefined
来源
Semiconductors | 2016年 / 50卷
关键词
Amorphous Film; Interference Structure; Silicon Nanoclusters; Silicon Suboxide; Local Partial Density;
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学科分类号
摘要
The phase composition and optical properties of hydrogenated amorphous films of silicon suboxide (a-SiOx:H) with silicon nanoclusters are studied. Ultrasoft X-ray emission spectroscopy show that silicon- suboxide films with various oxidation states and various amorphous silicon-cluster contents can be grown using dc discharge modulation. In films with an ncl-Si content of ∼50%, the optical-absorption edge is observed, whose extrapolation yields an optical band gap estimate of ∼3.2–3.3 eV. In the visible region, rather intense photoluminescence bands are observed, whose peak positions indicate the formation of silicon nanoclusters 2.5–4.7 nm in size in these films, depending on the film composition.
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页码:212 / 216
页数:4
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