Magnetic-field sensors based on anisotropic magnetoresistive thin-film structures for operation in a wide temperature range

被引:0
|
作者
N. A. Djuzhev
N. S. Mazurkin
V. S. Pozdnyakov
A. S. Iurov
M. Yu. Chinenkov
机构
[1] National Research University of Electronic Technology “MIET”,
[2] JSC “Avtoelektronika”,undefined
[3] “SPINTEK” LLC,undefined
来源
Semiconductors | 2015年 / 49卷
关键词
anisotropic magnetoresistance (AMR) effect; magnetic-field sensor; magnetic films; angularposition sensor; rotation-angle sensor; phase sensor;
D O I
暂无
中图分类号
学科分类号
摘要
The results of studies on the fabrication and optimization of the configuration of magnetic-field sensors based on anisotropic magnetoresistive thin-film structures are described. Magnetic-field sensors with an odd characteristic and a sensitivity to 23.7 (mV/V)/(kA/m) and a 180° angle-rotation sensor with a signal amplitude of 15 mV/V are obtained. Based on the performed thermal tests, the possibility of applying the developed sensors in extreme environments in the temperature range from –60 to +150°C is shown, and the temperature-sensitivity coefficient amounts to –0.35%/°C. The obtained sensors are tested in angle, speed, and phase sensors in the automobile industry. The characteristics of the developed sensors correspond to the analogues of leading world firms.
引用
收藏
页码:1739 / 1742
页数:3
相关论文
共 50 条
  • [31] Magnetic-field transducer based on closed-loop operation of magnetic sensors
    Grandi, G
    Landini, M
    IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2006, 53 (03) : 880 - 885
  • [32] Fabrication and characteristics of magnetic field sensors based on nano-polysilicon thin-film transistors
    Zhao Xiaofeng
    Wen Dianzhong
    Zhuang Cuicui
    Cao Jingya
    Wang Zhiqiang
    JOURNAL OF SEMICONDUCTORS, 2013, 34 (03)
  • [33] High Sensitivity Magnetic Field Sensors Based on Nano-Polysilicon Thin-Film Transistors
    Zhao Xiao-Feng
    Wen Dian-Zhong
    Zhuang Cui-Cui
    Liu Gang
    Wang Zhi-Qiang
    CHINESE PHYSICS LETTERS, 2012, 29 (11)
  • [34] Fabrication and characteristics of magnetic field sensors based on nano-polysilicon thin-film transistors
    赵晓锋
    温殿忠
    庄萃萃
    曹靖雅
    王志强
    Journal of Semiconductors, 2013, 34 (03) : 127 - 132
  • [35] THIN-FILM REFLECTION PROPERTIES OF AN ANISOTROPIC-PLASMA SLAB IMMERSED IN A STATIC MAGNETIC-FIELD NORMAL TO PLANE OF INCIDENCE
    KALLURI, D
    PRASAD, RC
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1973, 35 (06) : 801 - 816
  • [36] DENSITY OF ELECTRON-STATES FOR THIN-FILM WITH EXTERNAL LONGITUDINAL MAGNETIC-FIELD
    MUSIAL, G
    KLAMA, S
    ACTA PHYSICA POLONICA A, 1986, 70 (04) : 451 - 455
  • [37] IN T-TERM AND MAGNETIC-FIELD EFFECT IN CONDUCTIVITY OF NI THIN-FILM
    KOBAYASHI, S
    OOTUKA, Y
    KOMORI, F
    SASAKI, W
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1982, 51 (03) : 689 - 690
  • [38] CURRENT-DENSITY AND MAGNETIC-FIELD DISTRIBUTION IN HARD THIN-FILM SUPERCONDUCTORS
    THEUSS, H
    FORKL, A
    KRONMULLER, H
    PHYSICA C, 1992, 190 (03): : 345 - 352
  • [39] ELECTRON-ENERGY SPECTRUM FOR THIN-FILM IN EXTERNAL LONGITUDINAL MAGNETIC-FIELD
    KLAMA, S
    MUSIAL, G
    ACTA PHYSICA POLONICA A, 1986, 69 (04) : 585 - 597
  • [40] TRANSVERSAL THERMOELECTRIC-POWER IN A THIN-FILM IN AN EXTERNAL LONGITUDINAL MAGNETIC-FIELD
    MUSIAL, G
    KLAMA, S
    ACTA PHYSICA POLONICA A, 1988, 74 (01) : 85 - 90