Ultraviolet optoelectronic devices based on AIGaN alloys grown by molecular beam epitaxy

被引：0
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作者：
Theodore D. Moustakas
机构：
[1] Boston University,Electrical and Computer Engineering Department, Division of Materials Science and Engineering, Photonics Center
来源：
MRS Communications | 2016年 / 6卷
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摘要：
This paper reviews progress in ultraviolet (UV) optoelectronic devices based on AIGaN films and their quantum wells (QWs), grown by plasma-assisted molecular beam epitaxy. A growth mode, leading to band-structure potential fluctuations and resulting in AIGaN multiple QWs with internal quantum efficiency as high as 68%, is discussed. Atomic ordering in these alloys, which is different from that observed in traditional III-V alloys, and its effect on device performance is also addressed. Finally, progress in UV-light-emitting diodes, UV lasers, UV detectors, electroabsorption modulators, and distributed Bragg reflectors is presented.
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页码：247 / 269
页数：22
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