Radiation damages of GaAlAs LEDs by 70-MeV proton and 2-MeV electron irradiation

被引：0

作者：

H. Ohyama

H. Shitogiden

K. Takakura

K. Shigaki

S. Kuboyama

C. Kamesawa

E. Simoen

C. Claeys

机构：

[1] Kumamoto National College of Technology,E.E. Department

[2] JAXA,undefined

[3] IMEC,undefined

[4] KU Leuven,undefined

来源：

Journal of Materials Science: Materials in Electronics | 2008年 / 19卷

关键词：

Electron Irradiation; Deep Level Transient Spectroscopy; Reverse Current; Proton Irradiation; Deep Level Transient Spectroscopy Spectrum;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The electric characteristics of proton and electron irradiated Light emitting diodes are investigated. The reverse current increased proportional with the proton fluence, while the capacitance decreased for increasing irradiation. DLTS measurements revealed the DX center and the spectrum grows for higher irradiation fluence. For electron irradiations, the shape of the I/V and C/V characteristic did not changed, although for higher irradiation fluence rates, the reverse current increased and the capacitance decreased.

引用

页码：171 / 173

页数：2

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