Microwave power amplifiers based on AlGaN/GaN transistors with a two-dimensional electron gas

被引：0
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作者：
O. G. Vendik
I. B. Vendik
P. A. Tural’chuk
Ya. M. Parnes
M. D. Parnes
机构：
[1] St. Petersburg State Electrotechnical University “LETI,
[2] ”,undefined
[3] Rezonans Company,undefined
来源：
Technical Physics Letters | 2016年 / 42卷
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摘要：
A technique for synthesis of microwave power amplifiers based on transistors with a AlGaN/GaN heterojunction is discussed. Special focus is on the development of a technique for synthesis of transformation circuits of the power amplifier to increase efficiency with a retained high output power. The use of independent matching at the harmonic frequencies and fundamental frequency makes it possible to control the attainable efficiency in a wide frequency band along with the total suppression of harmonics beyond the operational band. Microwave power amplifiers for operation at 4 and 9 GHz have been developed and experimentally investigated.
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页码：1061 / 1063
页数：2
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