The Effect of Thermal Treatment on the Thermoelectric Figure of Merit of Silicon Doped Using Nuclear Transmutation

被引：0
|
作者：
G. P. Gaidar
机构：
[1] Institute for Nuclear Research,
[2] National Academy of Sciences of Ukraine,undefined
来源：
Surface Engineering and Applied Electrochemistry | 2021年 / 57卷
关键词：
silicon; nuclear transmutation; thermal treatment; thermo-emf; thermo-emf anisotropy; thermoelectric figure of merit;
D O I：
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学科分类号：
摘要：
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页码：425 / 430
页数：5
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