Role of an oxide layer in the long-range effect upon irradiation of silicon by light and ions with medium energy

被引：2
|
作者：
Tetelbaum D.I. [1 ,2 ]
Kuril'chik E.V. [2 ]
Mendeleva Y.A. [1 ,2 ]
Pyatkina A.A. [2 ]
机构：
[1] Physico-Technical Research Institute, Nizhni Novgorod State University, Nizhni Novgorod
[2] Nizhni Novgorod State University, Nizhni Novgorod
来源：
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques | 2013年 / 7卷 / 4期
关键词：
Oxide Layer; Surface Investigation; Neutron Technique; Back Side; Range Effect;
D O I：
10.1134/S1027451013040198
中图分类号：
学科分类号：
摘要：
Correlations between the modes of silicon irradiation with light, as well as the thickness of an oxide layer on the surface of the sample, and the character of changes in the microhardness in the long-range effect are experimentally established. The results are interpreted from the standpoint of the effect of processes that take place in the oxide layer upon irradiation and cause the generation of two types of hypersonic waves that determine the regularities of the effect. It is shown that an oxide layer on the irradiated silicon surface is a mandatory condition for manifestation of the long-range effect not only in the case of irradiation with light, but also upon ion irradiation. © 2013 Pleiades Publishing, Ltd.
引用
收藏
页码：631 / 636
页数：5
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