“Growth and Characterization of SiO2 Films for the Fabrication of Optical Waveguides”

The SiO2 films grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) system are used for the fabrication of optical waveguides due to their several advantages such as low temperature deposition, controlled refractive index and low tensile stress. These films are preferably used as core and cladding layers in the waveguide. The waveguides formed by the films with controlled refractive index are found to be most suitable for the coupling with the optical fibers as the R.I. are in the range of 1.45 to 1.47. It has been found from the observations that the SiO2 film grown at 300° C shows the excellent properties i.e. better thickness, precisely controlled refractive index and comparatively low tensile stress. The present paper reports the study of the deposition of SiO2 films with indigenously developed PECVD system and their characterization.