Fabrication and characterization of deeply-etched SiO2 waveguides

被引：0
|
作者：
Sheng, Zhen [1 ]
Yang, Liu [1 ]
Dai, Daoxin [1 ]
Lang, Tingting [1 ]
Wang, Zhechao [1 ]
机构：
[1] Zhejiang Univ, Ctr Opt & Electromagnet Res, State Key Lab Modern Opt Instrumentat, Hangzhou 310058, Zhejiang, Peoples R China
来源：
AOE 2007: ASIA OPTICAL FIBER COMMUNICATION & OPTOELECTRONIC EXPOSITION & CONFERENCE, CONFERENCE PROCEEDINGS | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Deeply-etched SiO(2) waveguide is fabricated and characterized. The fabrication process is easier than the conventional buried SiO(2) waveguide. The fabricated waveguide exhibits good performances, such as low propagation loss, broad band.
引用
收藏
页码：517 / 519
页数：3
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