A Transistor-Based Modulator for a Microwave Magnetron

被引：0
|
作者：
V. A. Vizir'
S. V. Ivanov
B. M. Koval'chuk
V. I. Manylov
N. G. Shubkin
V. V. Chervyakov
V. V. Yur'ev
L. D. Butakov
V. I. Tolmachev
机构：
[1] Russian Academy of Sciences,High Current Electronics Institute, Siberian Division
[2] Tomsk Polytechnical University,Research Institute of Nuclear Physics
来源：
Instruments and Experimental Techniques | 2004年 / 47卷
关键词：
Physical Chemistry; Microwave; Power Supply; Peak Power; Repetition Frequency;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A modulator designed as a power supply for a microwave magnetron with an output peak power of 3 MW and mean power of 10 kW is described. The 100 transistors used in the modulator are connected in parallel, and their capacitors are switched to the primary winding of a pulse transformer. Across the secondary winding, pulses are generated with a peak voltage of 50 kV, a current of 100 A, a duration of 0.6–6 μs, and a repetition frequency of up to 2 kHz.
引用
收藏
页码：468 / 471
页数：3
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