Second-harmonic spectroscopy of Ge/Si(001) and Si1-xGex(001)/Si(001)

被引：0
|
作者：
P.S. Parkinson
D. Lim
R. Büngener
J.G. Ekerdt
M.C. Downer
机构：
[1] Department of Chemical Engineering,
[2] University of Texas at Austin,undefined
[3] Austin,undefined
[4] TX 78 712 USA (Fax: 1-512/475-7824,undefined
[5] E-mail: porshia@bullwinkle.che.utexas.edu),undefined
[6] Department of Physics,undefined
[7] University of Texas at Austin,undefined
[8] Austin,undefined
[9] TX 78 712 USA (Fax: 1-512/471-9637,undefined
[10] Email: downer@physics.utexas.edu),undefined
来源：
Applied Physics B | 1999年 / 68卷
关键词：
PACS: 42.65.Ky; 42.65.An; 78.66 -w;
D O I：
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中图分类号：
学科分类号：
摘要：
Ge0.1(001)/Si(001) films with SH photon energies 3.1<2hν<3.5 eV near the bulk E1 critical point of Si(001) or Si0.9Ge0.1(001). Ge was deposited on Si(001) by using atomic layer epitaxy cycles with GeH4 or Ge2H6 deposition at 410 K followed by hydrogen desorption. As Ge coverage increased from 0 to 2 monolayers the SH signal increased uniformly by a factor of seven with no detectable shift in the silicon E1 resonant peak position. SH signals from Si0.9Ge0.1(001)/Si(001) were also stronger than those from intrinsic Si(001). Hydrogen termination of the Si0.9Ge0.1(001) and Ge/Si(001) surfaces strongly quenched the SH signals, which is similar to the reported trend on H/Si(001). We attribute the stronger signals from Ge-containingsurfaces to the stronger SH polarizability of asymmetric Ge-Si and Ge-Ge dimers compared to Si-Si dimers. Hydrogen termination symmetrizes all dimers, thus quenching the SH polarizability of all of the surfaces investigated.
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页码：641 / 648
页数：7
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