Modification of the near-surface layer of n-Si by hydrogen ions in a high-voltage pulsed beam discharge

被引：0
|
作者：
V. P. Demkin
S. V. Mel’nichuk
B. S. Semukhin
机构：
[1] Tomsk State University,Institute of Strength Physics and Materials Science, Siberian Division
[2] Russian Academy of Sciences,undefined
来源：
Technical Physics Letters | 2005年 / 31卷
关键词：
Hydrogen; Treatment Time; Qualitative Model; Pulse Beam; Hydrogen Treatment;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The near-surface layer of n-Si single crystal wafers has been subjected to microdoping by hydrogen ions in the plasma of a pulsed beam discharge. The resistivity and the current density of the samples have been studied as functions of the hydrogen treatment time. The hydrogen-modified n-Si samples exhibit photo emf. The results are interpreted within the framework of a qualitative model.
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页码：295 / 297
页数：2
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