Recent Emission Channeling Studies in Wide Band Gap Semiconductors

被引：0

作者：

U. Wahl

J. G. Correia

E. Rita

E. Alves

J. C. Soares

B. De Vries

V. Matias

A. Vantomme

机构：

[1] Department Física,Instituto Tecnológico e Nuclear

[2] Centro de Física Nuclear da Universidade de Lisboa,undefined

[3] CERN-PH,undefined

[4] Instituut voor Kern- en Stralingsfysica,undefined

来源：

Hyperfine Interactions | 2004年 / 159卷

关键词：

Fe doping; implantation; lattice location; rare earths; semiconductors;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We present results of recent emission channeling experiments on the lattice location of implanted Fe and rare earths in wurtzite GaN and ZnO. In both cases the majority of implanted atoms are found on substitutional cation sites. The root mean square displacements from the ideal substitutional Ga and Zn sites are given and the stability of the Fe and rare earth lattice location against thermal annealing is discussed.

引用

页码：363 / 372

页数：9

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